Si3457BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72019 .
Document Number: 72019
S09-0136-Rev. E, 02-Feb-09
www.vishay.com
5
相关PDF资料
SI3457DV MOSFET P-CH 30V 4A SSOT-6
SI3458BDV-T1-GE3 MOSFET N-CH 60V 4.1A 6-TSOP
SI3460BDV-T1-GE3 MOSFET N-CH 20V 8A 6-TSOP
SI3460DV-T1-E3 MOSFET N-CH 20V 5.1A 6TSOP
SI3464DV-T1-GE3 MOSFET N-CH D-S 20V 6-TSOP
SI3467DV-T1-GE3 MOSFET P-CH 20V 3.8A 6-TSOP
SI3473DV-T1-GE3 MOSFET P-CH D-S 12V 6-TSOP
SI3483DV-T1-GE3 MOSFET P-CH D-S 30V 6-TSOP
相关代理商/技术参数
SI3457CDV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI3457CDV-T1-E3 功能描述:MOSFET 30V 5.1A 3.0W 74mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3457CDV-T1-GE3 功能描述:MOSFET 30V 5.1A 3.0W 74mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3457DV 功能描述:MOSFET SSOT6 SINGLE PCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3457DV_Q 功能描述:MOSFET SSOT6 SINGLE PCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3457DV-T1 功能描述:MOSFET 30V 4.3A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3457DV-T1-E3 功能描述:MOSFET 30V 4.3A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3458-B01-IM 制造商:Silicon Laboratories Inc 功能描述:POWER OVER ETHERNET CHIP QFN 56PIN 8X8MM - Bulk